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  vishay siliconix dg2735/DG2736 document number: 74420 s-62532?rev. a, 01-jan-07 www.vishay.com 1 low voltage, 0.5 , dual spdt analog switch description the dg2735/2736 are low voltag e, low on-resistance, dual single-pole/double-throw (spdt) monolithic cmos analog switches designed for high performance switching of analog signals. combining low-power, high speed, low on-resis- tance, and small package size, the dg2735/2736 are ideal for portable and battery power applications. the dg2735/2736 have an operation range from 1.65 v to 4.3 v single supply. the dg2735 has two separate control pins with for the separated two spdt switched. the DG2736 has an en pin. all switches are at high impedance mode when the en is high. the dg2735/2736 are guaranteed 1.65 v logic compatible, allowing the easy interface with low voltage dsp or mcu control logic and ideal for one cell li-ion battery direct power. the switch conducts signals within power rails equally well in both directions when on, and blocks up to the power supply level when off. break-before-make is guaranteed. the dg2735/2736 are built on vi shay siliconix's sub micron cmos low voltage process technology and provides greater than 300 ma latch-up protection, as tested per jesd78. as a committed partner to t he community and the environ- ment, vishay siliconix manufa ctures this product with lead (pb)-free device terminations. dg2735/2736 are offered in a miniqfn package. the miniqfn package has a nickel-palla- dium-gold device termination and is represented by the lead (pb)-free "-e4" suffix. the nickel-palladium-gold device ter- minations meet all jedec standards for reflow and msl rat- ings. features ? low voltage operation (1.65 v to 4.3 v) ? low on-resistance - r on : 0.5 at 2.7 v ? fast switching: t on = 55 ns at 2.7 v ?t off = 40 ns at 2.7 v ? latch-up current > 300 ma (jesd78) benefits ? reduced power consumption ? high accuracy ? reduce board space ? ttl/1.65 v logic compatible applications ? cellular phones ? speaker headset switching ? audio and video signal routing ? pcmcia cards ? battery operated systems ? portable media player ? handheld test instruments functional block diagram and pin configuration gnd nc2 dg27 3 5 miniqfn-10l 6 7 2 1 v+ no1 com1 nc1 in1 3 4 5 in2 com2 no2 8 9 10 pin 1: long lead device markin g : ax for dg27 3 5 device markin g : bx for dg27 3 6 x = date/lot traceability code ax gnd nc2 dg27 3 6 miniqfn-10l 6 7 2 1 v+ no1 com1 nc1 in1 3 4 5 en com2 no2 8 9 10 pin 1: long lead bx rohs compliant
www.vishay.com 2 document number: 74420 s-62532?rev. a, 01-jan-07 vishay siliconix dg2735/DG2736 notes: a. signals on nc, no, or com or in exceeding v+ will be clamped by inte rnal diodes. limit forward diode current to maximum curr ent ratings. b. all leads welded or soldered to pc board. c. derate 4.0 mw/c above 70 c. truth table logic en (DG2736 only) nc1, 2 no1, 2 01offoff 11offoff 00onoff 10offon ordering information temp range package part number - 40 to 85c miniqfn10 dg2735dtn-t1-e4 DG2736dtn-t1-e4 absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit reference to gnd v+ - 0.3 to 5.0 v in, com, nc, no a - 0.3 to (v+ + 0.3) current (any terminal except no, nc or com) 30 ma continuous current (no, nc, or com) 250 peak current (pulsed at 1 ms, 10 % duty cycle) 500 storage temperature (d suffix) - 65 to 150 c power dissipation (packages) b miniqfn10 c 208 mw
document number: 74420 s-62532?rev. a, 01-jan-07 www.vishay.com 3 vishay siliconix dg2735/DG2736 specifications (v+ = 3 v) parameter symbol test conditions unless otherwise specified v+ = 3 v, 10 %,v in = 0.4 v or 1.65 v e temp a limits - 40 to 85 c unit min b typ c max b analog switch analog signal range d v analog r ds(on) full 0 v+ v on-resistance r ds(on) v+ = 2.7 v, i no/nc = 100 ma, v com = 0.5 v room 0.4 0.5 v+ = 2.7 v, i no/nc = 100 ma, v com = 1.5 v v+ = 2.7 v, i no/nc = 100 ma, v com = 0.5 v full 0.5 0.6 v+ = 2.7 v, i no/nc = 100 ma, v com = 1.5 v v+ = 4.3 v, i no/nc = 100 ma, v com = 0.9 v room 0.4 0.5 v+ = 4.3 v, i no/nc = 100 ma, v com = 2.5 v 0.3 v+ = 4.3 v, i no/nc = 100 ma, v com = 0.9 v full 0.5 0.6 v+ = 4.3 v, i no/nc = 100 ma, v com = 2.5 v r on match d r on v+ = 2.7 v, i no/nc = 100 ma, v com = 0.5 v, 1.5 v room 0.06 0.08 v+ = 4.3 v, i no/nc = 100 ma, v com = 0.9 v, 2.5 v r on resistance flatness d r on flatness v+ = 2.7 v, i no/nc = 100 ma, v com = 0.5 v, 1.5 v room 0.15 switch off leakage current i no/nc(off) v+ = 4.3 v, v no/nc = 0.3 v/3.0 v, v com = 3.0 v/0.3 v room - 2 2 na full - 10 10 i com(off) room - 2 2 full - 10 10 channel-on leakage current i com(on) v+ = 4.3 v, v no/nc = 0.3 v/3.0 v, v com = 3.0 v/0.3 v room full - 5 5 - 20 20 digital control input high voltage v inh full 1.65 v input low voltage v inl full 0.4 input capacitance c in full 6 pf input current i inl or i inh v in = 0 or v+ full - 1 1 a dynamic characteristics break-before-make time e t bbm v+ = 3.6 v, v no , v nc = 1.5 v, r l = 50 , c l = 35 pf room 1 5 ns tu r n - o n t i m e e t on room 50 78 full 80 turn-off time e t off room 35 58 full 60 enable turn-on time e DG2736 (en) t on(en) room 50 78 full 80 enable turn-off time e DG2736 (en) t off(en) room 35 58 full 60 off-isolation d o irr r l = 50 , c l = 5 pf, f = 100 khz room - 70 db crosstalk d x ta l k - 70 3db bandwith d r l = 50 , c l = 5 pf room 50 mhz no, nc off capacitance d c no(off) v in = 0 v, or v+, f = 1 mhz room 55 pf c nc(off) 55 channel on capacitance d c no(on) 130 c nc(on) 130
www.vishay.com 4 document number: 74420 s-62532?rev. a, 01-jan-07 vishay siliconix dg2735/DG2736 notes: a. room = 25 c, full = as determined by the operating suffix. b. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this data sheet. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. guarantee by design, not subjected to production test. e. v in = input voltage to perform proper function. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. parameter symbol test conditions unless otherwise specified v+ = 3 v, 10 %,v in = 0.4 v or 1.65 v e temp a limits - 40 to 85 c unit min b typ c max b power supply power supply range v+ 1.65 4.3 v power supply current i+ v in = 0 or v+ full 1.0 a specifications (v+ = 3 v)
vishay siliconix dg2735/DG2736 document number: 74420 s-62532?rev. a, 01-jan-07 www.vishay.com 5 typical characteristics t a = 25 c, unless otherwise noted r on vs. v com and supply voltage r on vs. analog voltage and temperature r on vs. analog voltage and temperature v com - an a log volt a ge (v) ( ) e c n a t s i s e r - n o - r n o 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 2.2 2.4 0.0 0.5 1.0 1.5 2.0 2.5 3 .0 3 .5 4.0 4.5 5.0 i no/nc = 100 ma t a = 25 c v+ = 1.5 v v+ = 1. 8 v v+ = 2.7 v v+ = 3 .6 v v+ = 4. 3 v v+ = 3 .0 v v com - an a log volt a ge (v) ( ) e c n a t s i s e r - n o - r n o 0.0 0.1 0.2 0. 3 0.4 0.5 0.6 0 0.5 1 1.5 2 2.5 3 + 25 c + 8 5 c i s = 100 ma nc v+ = 2.7 v, - 40 c v com - an a log volt a ge (v) ( ) e c n a t s i s e r - n o - r n o 0.0 0.1 0.2 0. 3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3 .0 3 .5 4.0 4.5 i s = 100 ma nc v+ = 4. 3 v, + 25 c + 8 5 c - 40 c r on vs. analog voltage and temperature r on vs. analog voltage and temperature supply current vs. temperature v com - an a log volt a ge (v) ( ) e c n a t s i s e r - n o - r n o 0.0 0.1 0.2 0. 3 0.4 0.5 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3 .0 + 8 5 c + 25 c - 40 c i s = 100 ma no v+ = 2.7 v, v com - an a log volt a ge (v) ( ) e c n a t s i s e r - n o - r n o 0.0 0.1 0.2 0. 3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3 .0 3 .5 4.0 4.5 + 8 5 c + 25 c - 40 c i s = 100 ma no v+ = 4. 3 v, temper a t u re (c) ) a p ( t n e r r u c y l p p u s - + i 1 10 100 1000 10000 100000 - 60 - 40 - 20 0 20 40 60 8 0100 v+ = 4. 3 v
www.vishay.com 6 document number: 74420 s-62532?rev. a, 01-jan-07 vishay siliconix dg2735/DG2736 typical characteristics t a = 25 c, unless otherwise noted leakage current vs. temperature leakage vs. analog voltage temper a t u re (c) ) a p ( t n e r r u c e g a k a e l - 60 - 40 - 20 0 20 40 60 8 0 100 1 10 100 1000 10000 100000 i nc(off) i com(off) i com(on) v+ = 4. 3 v v com , v no , v nc - an a log volt a ge (v) ) a p ( t n e r r u c e g a k a e l - 5 - 4 - 3 - 2 - 1 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3 .0 3 .5 4.0 4.5 5.0 i no(off) i com(off) i com(on) switching time vs. temperature insertion loss, off-isolation crosstalk vs. frequency temper a t u re (c) t on , t off - s witching time (n s ) 0 5 10 15 20 25 - 60 - 40 - 20 0 20 40 60 8 0 100 t off v+ = 2.7 v t on v+ = 4. 3 v t off v+ = 4. 3 v t on v+ = 2.7 v 3 00 k 1 mhz 10 mhz 100 mhz 1 ghz fre qu ency (hz) l o ss , o irr, x talk (db) - 8 0 - 70 - 60 - 50 - 40 - 3 0 - 20 - 10 0 10 dg27 3 5/ 3 6 oirr lo ss xtalk v+ = 3 .0 v r = 50 l switching threshold vs. supply voltage 0.0 0.5 1.0 1.5 2.0 v+ - su pply volt a ge (v) h t g n i h c t i w s - ) v ( d l o h s e r v t 1.0 1.5 2.0 2.5 3 .0 4.0 3 .5
vishay siliconix dg2735/DG2736 document number: 74420 s-62532?rev. a, 01-jan-07 www.vishay.com 7 test circuits figure 1. switching time switch input c l (includes fixture and stray capacitance) v+ in no or nc c l 35 pf com logic input r l 50 v out gnd v+ 50 % 0 v logic input switch output t on t off logic "1" = switch on logic input waveforms inverted for switches that have the opposite logic sense. 0 v switch output v out v com r l r l r on 0.9 x v out t r 5 ns t f 5 ns v inh v inl = + < < ( ) figure 2. break-before-make interval c l (includes fixture and stray capacitance) nc v no no v nc 0 v logic input switch output v o v nc = v no t r < 5 ns t f < 5 ns 90 % t d t d in com v+ gnd v+ c l 35 pf v o r l 50 v inl v inh
www.vishay.com 8 document number: 74420 s-62532?rev. a, 01-jan-07 vishay siliconix dg2735/DG2736 test circuits vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a com posite of all qualified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?74420 . figure 3. charge injection off on on in v out v out q = v out x c l c l = 1 nf r gen v out com v in = 0 - v+ in gnd v+ v+ in depends on switch configuration: input polarity determined b y sense of switch. + nc or no v gen figure 4. off-isolation in gnd nc or no 0 v, 2.4 v 10 nf com off isolation 20 log v com v no / nc r l analyzer v+ v+ com = figure 5. channel off/on capacitance nc or no f = 1 mhz in com gnd 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent 10 nf v+ v+
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.


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